Package Dimensions
SOT-563F
6
1.70
1.50
4
A
0.30
0.15
B
0.50
0.50
1.20 BSC
(0.20)
1
3
1.60
0.1 C B A
1.25
0.30
0.55
1.80
0.50
1.00
TOP VIEW
LAND PATTERN RECOMMENDATION
0.20 BSC
C
BOTTOM VIEW
0.60
0.56
0.35 BSC
SEE DETAIL A
0.10
0.00
0.18
0.10
DETAIL A
SCALE 2 : 1
Dimensions in Millimeters
? 2010 Fairchild Semiconductor Corporation
2N7002V/VA Rev. A1
5
www.fairchildsemi.com
相关PDF资料
2N7002VC-7 MOSFET N-CH DUAL 60V SOT-563
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2N7002W MOSFET N-CH 60V 115MA SOT-323
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2SJ673-AZ MOSFET P-CH -60V -36A TO-220
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相关代理商/技术参数
2N7002VA-7 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002VA-7-F 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002VA-7-L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002VAC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002VAC-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002VC 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002VC_07 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002VC-7 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube